Brilliance Semiconductor Extends Family of High Speed, Ultra Low Power SRAMs to 16Mbits
Maintain Leadership Position with Industry’s Broadest Portfolio of Asynchronous SRAMs
Hsinchu, Taiwan, March 2, 2005 – Brilliance Semiconductor, Inc. (BSI), a leading SRAM supplier, today announced a new family of ultra low power 8Mbits and 16Mbits asynchronous SRAMs, with a significantly wide power supply voltage (1.65V-3.6V), low operating power consumption (8mA at 70 ns), low standby power consumption (15 uA at 3.6V at 85 o C), and high speed performance (70ns at 1.65V). These chips target a wide range of cell phones, high end PDAs, 3-D barcode reader, GPS and other advanced battery backup applications. The new family of ultra low voltage 8Mbits and 16 Mbits asynchronous SRAMs is designed with full CMOS six-transistor (6T) cell structure and manufactured using leading-edge CMOS process technology.
Available in four different configurations (1M x 8, 512K x 16, 2M x 8 and 1M x 16), BSI's BH62- and BH616- series SRAMs provide solutions for 1.8V application. Innovative design techniques significantly improve power consumption, speed and manufacturing flexibility. With the release of the 16Mbits family, BSI now offers the broadest portfolio of cost-effective, high-performance, wide-range asynchronous SRAMs from 16Kbits to 16Mbits in the market.
BSI offers the 8Mbits, BH62UV8000 (1M x 8) and BH616UV8010 (512K x 16), and 16Mbits, BH62UV1600 (2M x 8) and BH616UV1610 (1M x 16), in a 48-ball ball mini grid array package (mini-BGA). The BH616UV8010 is also available in a 48-pin thin small-outline package (TSOP). The devices are equipped in lead-free and green packages as well.
Availability and price samples of the various 8Mbits and 16Mbits devices in the asynchronous SRAM family are available now. Production quantities will be available in May, 2005.
About Brilliance Semiconductor, Inc.
Brilliance Semiconductor, Inc. (BSI) designs asynchronous SRAMs for mobile, communications systems and consumer markets. BSI maintains leadership position with the industry's broadest portfolio of Asynchronous SRAMs from 16Kbits to 16Mbits. BSI has a R&D facility both in Taiwan and in San Jose, California and Sales office in Shanghai, China. More information about BSI is accessible online at www.brilliancesemi.com
Contact Us
Brilliance Semiconductor, Inc. Website : http://www.brilliancesemi.com
Tel:+886-3-5770398(Direct Line)
Position Posted 06/30/05
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